Seção de choque de fotoionização para anel quântico 2D com e sem efeitos de rotação

Abstract

In this study, we investigated the electronic and optical properties of a mesoscopic het- erostructure of a two-dimensional quantum ring composed of gallium arsenide (GaAs)

semiconductor. Using the confinement potential proposed by Tan-Inkson to describe the

system under consideration, we conducted a numerical study of the photoionization cross- section (SCF) for a 2D quantum ring with and without rotation effects. The interior of

the quantum ring is penetrated by an Aharonov-Bohm (AB) flux. Our research aims to investigate how the electronic and optical properties of this mesoscopic structure respond to variations in the following parameters: average radius, Aharonov-Bohm flux, angular

velocity, and incident photon energy. Under these conditions, we established that opti- cal transitions occur from the ground state to the next excited state in the conduction

sub-band, following a specific selection rule. One of the fundamental objectives of this study is to analyze how these rules can influence the general properties of two-dimensional quantum rings. To elucidate the impact of rotation on the photoionization process of the system, we present results that highlight the effects of the physical quantities involved in the model.